InGaN based micro LED is the most ideal new micro display technology. It is combined with active Si based CMOS display driver chip to form a Micro LED micro display chip with high luminous efficiency and better color performance. With the new optical waveguide, it will bring an epoch-making product experience. Since the self luminous GaN Micro LED micro display chip does not need backlighting, it reduces various light gathering and projection components, which can greatly reduce the size of the optical mechanism; In addition, each Micro LED pixel is switched independently, which can significantly improve the light efficiency and dynamic contrast. Compared with silicon based OLEDs, GaN Micro LED has a wider operating temperature range, can withstand higher current density, better output brightness (up to 1000000 nit, 30 times OLED), and high reliability. It is more suitable for some special scenes and military fields. In addition, GaN Micro LED has high switching speed, narrower luminous spectrum, lower power consumption (~10% LCD,~50% OLED), and higher luminous efficiency. GaN Micro LED will become the most core hardware module of high-end consumer electronic products in the future, especially AR technology, to meet the requirements for display brightness, frame rate, color, standby time, and provide advantages that other solutions cannot match.

Semiconductor laser is a chip based laser, which has the advantages of small size, low cost, high efficiency, long life and so on. It is the most widely used laser category. In the short wave band, from green light to deep ultraviolet wave band, GaN based lasers are irreplaceable semiconductor lasers. Japan's NEDO and Germany's Photon Innovation Project "EFFILAS" have deployed GaN based laser research projects, and are included in the 15 major science and technology projects of China's National Science and Technology Innovation 2030. GaN based lasers are not only widely used in display, lighting, storage, material processing, quantum information, biomedicine and other fields, but also the core components in the field of marine underwater detection and underwater communication with increasingly fierce international competition.

Group III nitride materials represented by gallium nitride (GaN) are direct band gap semiconductors, whose band gap width is continuously adjustable from 0.7 eV to 6.2 eV, and are ideal materials for making semiconductor lasers in the ultraviolet to visible light bands. Vertical cavity surface emitting lasers (VCSEL) based on group III nitride semiconductors have the advantages of low power consumption, high modulation rate, small divergence angle, circular facula, good wavelength stability, on-chip testing, easy two-dimensional integration, etc. It has broad market prospects in new display, laser storage, laser medical and other important fields, and has been focused on and supported by DARPA of the US Department of Defense. Group III nitride VCSEL has been written into the Outline of the National Medium and Long term Science and Technology Development Plan (2021-2035), and has become an important research content of the National Natural Science Key Fund and the National Key R&D Plan.

The ADAS Advanced Driving Assistance System uses a variety of sensors (millimeter wave radar, laser radar, single/binocular camera and satellite navigation) installed on the vehicle to sense the surrounding environment at any time during the driving process of the vehicle, collect data, identify, detect and track static and dynamic objects, and conduct systematic calculation and analysis in combination with navigation map data, Thus, the driver can be aware of the possible danger in advance, and effectively increase the comfort and safety of automobile driving. ADB Adaptive Driving Beam, an intelligent high beam system, is mainly used to improve the safety of passing at night. Traditional car headlights, including some xenon headlights, are dazzling, which can easily cause dazzle to drivers in the opposite lane when they meet at night, laying a hidden danger for driving safety. In contrast, ADB technology judges the position and distance of oncoming vehicles through the input of video camera signals, adjusts the lighting area accordingly, turns off or dims the lighting in the opposite vehicle area, avoids glare to oncoming vehicles, and at the same time, maximizes the driver's vision requirements, which will become the technical trend of vehicle safety lighting.

The emission wavelength of group III nitride semiconductor UV LED covers the deep UV to near UV band of 200~405 nm, and has broad application prospects in UV curing, banknote and jewelry anti-counterfeit identification, plant light catalytic growth, biomedical and sterilization. Compared with traditional mercury lamp, UV LED has the following advantages: (1) UV LED is more energy saving, the luminous intensity per unit area is more than 1000 times higher than mercury lamp, but the energy consumption is only about 1/10 of mercury lamp; (2) UV LED switch does not need preheating, and its service life is much longer than traditional mercury lamp; (3) UV LED has good stability, uniform irradiation effect and is insensitive to temperature; (4) UV LED is compact, small and easy to use; (5) UV LED is environmentally friendly, mercury free, and does not produce ozone when working. At present, countries and regions such as Europe, Japan and the United States are planning to replace mercury induced UV light sources that are harmful to the environment with nitride UV LED in some application fields within 3-5 years. The market report of Yole Development, an international famous market analysis and consulting company, predicts that the UV LED market will accelerate its growth, and it is expected that the UV LED market will exceed 1 billion dollars by 2021.

Excimer ultraviolet lamp is based on the principle of dielectric barrier gas discharge, which has the advantages of large energy, large area, long life and so on. Using different working gases, excimer lamps can emit ultraviolet light with different wavelengths and excellent monochromaticity, especially deep ultraviolet and vacuum ultraviolet light with extremely short wavelengths. These short wavelength ultraviolet light have important applications in integrated circuit lithography, material processing, medical research, sterilization, plant protection and other fields. In recent years, the 200-230nm deep ultraviolet light has been proved to be harmless to human body, so it has attracted extensive attention from the academic and industrial circles. In deep ultraviolet band, low pressure mercury lamp is widely used. According to Minamata Convention, mercury containing products will be phased out due to environmental damage. In addition, the light emitted at 184.7 nm and 253.7 nm will produce ozone and burns, which are harmful to human health. On the other hand, the LED efficiency of this band is still very low, which is not practical. Therefore, it can be predicted that for a long time in the future, the 222 nm krypton chloride excimer UV lamp will be an indispensable deep UV light source in high-end industry, medical health, plant protection and other fields.