Compound semiconductor epitaxy

• Silicon based GaN heteroepitaxy

  Heteroepitaxial growth of gallium nitride (GaN) on silicon substrate is a subversive semiconductor material growth technology. Group III nitride semiconductor devices represented by GaN have unique advantages in low power consumption, small size and high energy efficiency.

• AlN heteroepitaxy

  Aluminum nitride (AlN) thin film material has the advantages of direct broadband gap, high temperature resistance, radiation resistance, strong piezoelectric effect, etc. It has broad prospects in the field of ultraviolet optoelectronics, power electronics, microwave communications.